Electrochemical fabrication of superhydrophobic Zn surfacesJING SUN; FANGDONG ZHANG; JINLONG SONG et al.Applied surface science. 2014, Vol 315, pp 346-352, issn 0169-4332, 7 p.Article

Nanoporous silicon membrane for fuel cells realized by electrochemical etchingJAOUADI, M; DIMASSI, W; GAIDI, M et al.Applied surface science. 2012, Vol 258, Num 15, pp 5654-5658, issn 0169-4332, 5 p.Article

Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxialle stressed silicon plateSTARKOV, V; GAVRILIN, E; VYATKIN, A et al.SPIE proceedings series. 2004, pp 225-234, isbn 0-8194-5324-2, 10 p.Conference Paper

Monitoring the growth of nonuniform gratings written holographically by Gaussian laser beamsBJORKHOLM, J. E; EICHNER, L.Journal of applied physics. 1985, Vol 57, Num 7, pp 2402-2405, issn 0021-8979Article

High-aspect-ratio silicon dioxide pillarsTRIFONOV, T; RODRIGUEZ, A; SERVERA, F et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 8, pp 1634-1638, issn 0031-8965, 5 p.Conference Paper

Micropatterning on cylindrical surfaces via electrochemical etching using laser maskingCHULL HEE CHO; HONG SHIK SHIN; CHONG NAM CHU et al.Applied surface science. 2014, Vol 301, pp 442-450, issn 0169-4332, 9 p.Article

PREPARATION DE PLAQUES SEMICONDUCTRICES MINCES PAR DECAPAGE ELECTROLYTIQUESHENGUROV VG; SHABANOV VN; GUR'YANOV AG et al.1979; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1979; NO 5; PP. 262-263; BIBL. 5 REF.Article

Deep trench etching in macroporous siliconGEPPERT, T; SCHWEIZER, S. L; GÖSELE, U et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 84, Num 3, pp 237-242, issn 0947-8396, 6 p.Article

Study of photoluminescence in porous silicon prepared by electrochemical etching of amorphous siliconBHATTACHARYA, E; CHANDRAKANTH, R.SPIE proceedings series. 1998, pp 603-606, isbn 0-8194-2756-X, 2VolConference Paper

Passivation analysis of micromechanical silicon structures obtained by electrochemical etch stopGÖTZ, A; ESTEVE, J; BAUSELLS, J et al.Sensors and actuators. A, Physical. 1993, Vol 37-38, pp 744-750, issn 0924-4247Conference Paper

Formation of uniform square-shaped tunnel pit by electrochemical etching with an opened polyimide layer on aluminum foilPARK, Hwa-Sun; LEE, Chang-Hyoung; CHO, Hyung-Joon et al.Surface and interface analysis. 2012, Vol 44, Num 11-12, pp 1423-1426, issn 0142-2421, 4 p.Conference Paper

A development in the preparation of sharp scanning tunneling microscopy tipsSONG, J. P; PRYDS, N. H; GLEJBØL, K et al.Review of scientific instruments. 1993, Vol 64, Num 4, pp 900-903, issn 0034-6748Article

Etch-stop behaviour of depletion layersHUSTER, R; KOVACS, A; STOFFEL, A et al.Journal of micromechanics and microengineering (Print). 1993, Vol 3, Num 3, pp 149-151, issn 0960-1317Conference Paper

Formation of graphite zigzag edges by cathodic electrochemical etching in acidic solutionSHIMADA, Toshihiro; KUBOTA, Shosei; YANASE, Takashi et al.Carbon (New York, NY). 2014, Vol 67, pp 300-303, issn 0008-6223, 4 p.Article

SU8 photoresist as an etch mask for local deep anodic etching of siliconSTARKOV, V. V; GAVRILIN, E. Yu; KONLE, J et al.Physica status solidi. A. Applied research. 2003, Vol 197, Num 1, pp 150-157, issn 0031-8965, 8 p.Conference Paper

Surface micromachining by sacrificial aluminium etching : Sacrificial etching papersWESTBERG, D; PAUL, O; ANDERSSON, G. I et al.Journal of micromechanics and microengineering (Print). 1996, Vol 6, Num 4, pp 376-384, issn 0960-1317Article

Electrochemical etching of sharp tips for STM reveals singularityQUAADE, U. J; ODDERSHEDE, L.Europhysics letters (Print). 2002, Vol 57, Num 4, pp 611-617, issn 0295-5075Article

PREPARATION D'EMETTEURS AUTOELECTRONIQUES POINTUS PAR GRAVUREFRIDMAN V YA.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 1; PP. 227; BIBL. 2 REF.Article

HALL MOBILITY IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 667-674; BIBL. 20 REF.Article

A NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMSKAMINS TI.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 915-916; BIBL. 6 REF.Serial Issue

MINORITY-CARRIER LIFETIME IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 675-681; BIBL. 15 REF.Article

CHARACTERISTICS OF SI-SIO₂ INTERFACES BENEATH THIN SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI; DEAL BE.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 4; PP. 557-560; BIBL. 7 REF.Article

Preparation of sharp gold tips for STM by using electrochemical etching methodBAYKUL, M. C.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 229-233, issn 0921-5107Conference Paper

Operation of α(6H)-SiC pressure sensor at 500°COKOJIE, R. S; NED, A. A; KURTZ, A. D et al.Sensors and actuators. A, Physical. 1998, Vol 66, Num 1-3, pp 200-204, issn 0924-4247Conference Paper

The formation, morphology, and optical properties of porous silicon structuresSEARSON, P. C; MACAULAY, J. M; PROKES, S. M et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 11, pp 3373-3378, issn 0013-4651Article